Channel Mobility Model of Nano-Node MOSFETs Incorporating Drain-and-Gate Electric Fields

Abstract

A novel channel mobility model with two-dimensional (2D) aspect is presented covering the effects of source/drain voltage (VDS) and gate voltage (VGS), and incorporating the drift and diffusion current on the surface channel at the nano-node level, at the 28-nm node. The effect of the diffusion current is satisfactory to describe the behavior of the drive current in nano-node MOSFETs under the operations of two-dimensional electrical fields. This breakthrough in the model’s establishment opens up the integrity of long-and-short channel devices. By introducing the variables VDS and VGS, the mixed drift and diffusion current model effectively and meaningfully demonstrates the drive current of MOSFETs under the operation of horizontal, vertical, or 2D electrical fields. When comparing the simulated and experimental consequences, the electrical performance is impressive. The error between the simulation and experiment is less than 0.3%, better than the empirical adjustment required to issue a set of drive current models.