Atomistic guiding principles for MONOS-type memories with high program/erase cycle endurance
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Publisher
IEEE
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http://xplorestaging.ieee.org/ielx5/5419306/5424206/05424371.pdf?arnumber=5424371
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Microscopic physical origin of charge traps in 3D NAND flash memories;Japanese Journal of Applied Physics;2023-02-14
2. Chickens or Eggs in the Atomic World: Structures and Electronic Properties of Defects in Semiconductors;JPSJ News and Comments;2022-01-15
3. Theoretical study of the atomistic behavior of O vacancy complexes with N and H atoms in the SiO2 layer of a metal–oxide–nitride–oxide–semiconductor memory: Physical origin of the irreversible threshold voltage shift observed in metal–oxide–nitride–oxide–semiconductor memories;Japanese Journal of Applied Physics;2018-07-20
4. Possibility of Metal-Oxide-Nitride-Oxide-Semiconductor Memories for Long Lifespan Archive Memories;IEICE Transactions on Electronics;2017
5. Characterization of the charge trapping properties in p-channel silicon–oxide–nitride–oxide–silicon memory devices including SiO2/Si3N4 interfacial transition layer;Japanese Journal of Applied Physics;2015-09-03
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