Possibility of Metal-Oxide-Nitride-Oxide-Semiconductor Memories for Long Lifespan Archive Memories-Reference-Cited by-同舟云学术

Possibility of Metal-Oxide-Nitride-Oxide-Semiconductor Memories for Long Lifespan Archive Memories

Published:2017 Issue:10 Volume:E100.C Page:928-933
ISSN:0916-8524
Container-title:IEICE Transactions on Electronics
language:en
Short-container-title:IEICE Trans. Electron.

Author:

SHIRAKAWA Hiroki¹,YAMAGUCHI Keita¹,ARAIDAI Masaaki¹²,KAMIYA Katsumasa³,SHIRAISHI Kenji¹²

Affiliation:

1. Graduate School of Engineering, Nagoya University

2. Institute of Materials and Systems for Sustainability, Nagoya University

3. Center for Basic Education and Integrated Learning, Kanagawa Institute of Technology

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.jstage.jst.go.jp/article/transele/E100.C/10/E100.C_928/_pdf

Reference25 articles.

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3. [3] “MDISC Archive Service,” Millenniata, Inc., http://www.mdisc.com/

4. [4] “Successful read/write of digital data in fused silica glass with a recording density equivalent to Blu-ray Disc^TM,” Hitachi, Ltd., http://www.hitachi.com/New/cnews/month/2014/10/141020a.html, 2014.

5. [5] J. Qiu, K. Miura, and K. Hirao, “Femtosecond laser-induced microfeatures in glasses and their applications,” J. Non-Cryst. Solids., vol.354, no.12-13, pp.1100-1111, 2008. 10.1016/j.jnoncrysol.2007.02.092