GaN double ifeterojunction field effect transistor for microwave and millimeterwave power applications-Reference-Cited by-同舟云学术

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GaN double ifeterojunction field effect transistor for microwave and millimeterwave power applications

Published: Issue: Volume: Page:
ISSN:
Container-title:IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004.
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Author:

Micovic M.,Hashimoto P.,Hu M.,MilosavIjevic I.,Duvall J.,Willadsen P.J.,Wong W.S.,Conway A.M.,Kurdoghlian A.,Deelman P.W.,Moon J.-S.,Schmitz A.,Delaney M.J.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/9719/30682/01419298.pdf?arnumber=1419298

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