Scaling of E-mode power GaN-HEMTs for low voltage/low Ron applications: Implications on robustness-Reference-Cited by-同舟云学术

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Scaling of E-mode power GaN-HEMTs for low voltage/low Ron applications: Implications on robustness

Published:2023-11 Issue: Volume:150 Page:115133
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Benato Andrea,De Santi Carlo,Borga Matteo,Bakeroot Benoit,Filipek Izabela Kuzma,Posthuma Niels,Decoutere Stefaan,Meneghesso Gaudenzio,Zanoni Enrico,Meneghini Matteo

Funder

Electronic Components and Systems for European Leadership

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. A review of GaN HEMT broadband power amplifiers;Hamza;AEU—Int. J. Electron. Commun.,2020

2. Review of GaN HEMT applications in power converters over 500 W;Ma;Electronics,2019

3. Current status and future trends of GaN HEMTs in electrified transportation;Keshmiri;IEEE Access,2020

4. GaN HEMTs on Si with regrown contacts and cutoff/maximum oscillation frequencies of 250/204 GHz;Li;IEEE Electron Device Lett.,2020

5. High-performance InAlN/GaN HEMTs on silicon substrate with high fT× Lg;Cui;Appl. Phys. Express,2019

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