Experimental demonstration of 100nm channel length In<inf>0.53</inf>Ga<inf>0.47</inf>As-based vertical inter-band tunnel field effect transistors (TFETs) for ultra low-power logic and SRAM applications-Reference-Cited by-同舟云学术

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Experimental demonstration of 100nm channel length In0.53Ga0.47As-based vertical inter-band tunnel field effect transistors (TFETs) for ultra low-power logic and SRAM applications

Published:2009-12 Issue: Volume: Page:
ISSN:
Container-title:2009 IEEE International Electron Devices Meeting (IEDM)
language:
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Author:

Mookerjea S.,Mohata D.,Krishnan R.,Singh J.,Vallett A.,Ali A.,Mayer T.,Narayanan V.,Schlom D.,Liu A.,Datta S.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5419306/5424206/05424355.pdf?arnumber=5424355

Cited by 40 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. III-V material-based junction-free L-shaped gate normal line tunneling FET for improved performance;Semiconductor Science and Technology;2024-08-07

2. Design and Analyze the Effect of Hetero Material and Dielectric on TFET with Dual Work Function Engineering;Nanoscience & Nanotechnology-Asia;2024-02

3. Vertical tunneling FET with Ge/Si doping-less heterojunction, a high-performance switch for digital applications;Scientific Reports;2023-10-05

4. Current Status and Future Perspectives of Tunnel Field Effect Transistors for Low Power Switching Applications;Lecture Notes in Electrical Engineering;2023-09-03

5. Tunnel Field‐Effect Transistors Based on III–V Semiconductors;Beyond‐CMOS;2023-07-21

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