Fluctuation limits & amp; scaling opportunities for CMOS SRAM cells-Reference-Cited by-同舟云学术

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Fluctuation limits & amp; scaling opportunities for CMOS SRAM cells

Published: Issue: Volume: Page:
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Container-title:IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.
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Author:

Bhavnagarwala A.,Kosonocky S.,Radens C.,Stawiasz K.,Mann R.,Qiuyi Ye ,Chin K.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/10701/33791/01609437.pdf?arnumber=1609437

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Lightly Doped Drain Process on Variability for Static Random-Access Memory;2024 Conference of Science and Technology for Integrated Circuits (CSTIC);2024-03-17

2. Impact of Back-Gate Radiation on Single-Event Effects of Ultrathin Body and Buried Oxide Fully Depleted Silicon-on-Insulator MOSFETs;Journal of Electronic Materials;2023-08-30

3. Optimization of the aspect ratio to enhance the power and noise-margin of a standard 6T(S6T)-SRAM cell;2022 Fourth International Conference on Emerging Research in Electronics, Computer Science and Technology (ICERECT);2022-12-26

4. Robust low power transmission gate (TG) based 9T SRAM cell with isolated read and write operation;International Journal of Electronics;2021-07-13

5. Statistical analysis of temperature dependence of worst case static random access memory data retention voltage using extreme value theory;Japanese Journal of Applied Physics;2020-02-28

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