Effect of Lightly Doped Drain Process on Variability for Static Random-Access Memory
Author:
Affiliation:
1. College of Integrated Circuits, Zhejiang University,Hangzhou,China,311200
2. School of Microelectronics, University of Science and Technology of China,Hefei,China,230026
3. Zhejiang ICsprout Semiconductor Co., Ltd,Hangzhou,China,311200
Funder
National Key R&D Program of China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10531806/10531771/10531862.pdf?arnumber=10531862
Reference7 articles.
1. Post-Fabrication self-convergence scheme for suppressing variability in SRAM cells and logic transistors;Suzuki
2. Fluctuation limits & amp; scaling opportunities for CMOS SRAM cells
3. Impact of DIBL variability on SRAM static noise margin analyzed by DMA SRAM TEG
4. Investigation of the Statistical Variability of Static Noise Margins of SRAM Cells Using the Statistical Impedance Field Method
5. Reliability challenges in CMOS technology: A manufacturing process perspective
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