Efficiency improvement of LDMOS transistors for base stations: towards the theoretical limit
Author:
Publisher
IEEE
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http://xplorestaging.ieee.org/ielx5/4154162/4139311/04154433.pdf?arnumber=4154433
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Modeling and Simulation of Discrete Silicon Carbide Integrated Passive Devices in High-Power RF Amplifiers;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16
2. Semiconductors and Semiconductor Devices and Circuits;Fundamentals of RF and Microwave Techniques and Technologies;2023
3. Device-Circuit Co-Design and ESD/HCI Reliability Aware Design of Field Plated RF LDMOS Devices;2022 IEEE International Conference on Emerging Electronics (ICEE);2022-12-11
4. Novel Step Field Plate RF LDMOS Transistor for Improved BVDS-R on Tradeoff and RF Performance;IEEE Transactions on Electron Devices;2022-08
5. Improved DC-RF dispersion with epitaxial passivation for high linearity graded AlGaN channel field effect transistors;Applied Physics Express;2020-02-25
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