Improved DC-RF dispersion with epitaxial passivation for high linearity graded AlGaN channel field effect transistors
Author:
Funder
Office of Naval Research
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
https://iopscience.iop.org/article/10.35848/1882-0786/ab7480/pdf
Reference17 articles.
1. Linearity characteristics of microwave-power GaN HEMTs
2. Power amplifiers and transmitters for RF and microwave
3. Linearity Enhancement of a Fully Integrated 6-GHz GaN Power Amplifier
4. A compact large signal model of LDMOS
5. Efficiency improvement of LDMOS transistors for base stations: towards the theoretical limit
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1. RF p-GaN HEMT With 0.9-dB Noise Figure and 12.8-dB Associated Gain for LNA Applications;IEEE Electron Device Letters;2023-09
2. Investigation of multi-fingers drain field plate in dual-threshold coupling AlGaN/GaN high electron mobility transistors for optimizing linearity at high electrical fields in the Ka band;Semiconductor Science and Technology;2023-08-03
3. Tuning composition in graded AlGaN channel HEMTs toward improved linearity for low-noise radio-frequency amplifiers;Applied Physics Letters;2023-04-10
4. Improvement of DC and f T performances of graded-channel HEMTs by polarization engineering;Semiconductor Science and Technology;2022-08-19
5. Optimization of linearity at high electrical field for dual threshold coupling AlGaN/GaN HEMT applied in Ka-band applications;Applied Physics Letters;2022-08-15
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