On the progressive breakdown statistical distribution and its voltage acceleration-Reference-Cited by-同舟云学术

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On the progressive breakdown statistical distribution and its voltage acceleration

Published:2007-12 Issue: Volume: Page:
ISSN:
Container-title:2007 IEEE International Electron Devices Meeting
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Author:

Wu Ernest,Tous Santi,Sune Jordi

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4418847/4418848/04418982.pdf?arnumber=4418982

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Facts and Myths of Dielectric Breakdown Processes—Part II: Post-Breakdown and Variability;IEEE Transactions on Electron Devices;2019-11

2. Time-Dependent Dielectric Breakdown in High-Voltage GaN MIS-HEMTs: The Role of Temperature;IEEE Transactions on Electron Devices;2017-08

3. On the Impact of Time-Zero Variability, Variable NBTI, and Stochastic TDDB on SRAM Cells;IEEE Transactions on Electron Devices;2016-07

4. Influence of gate oxides with high thermal conductivity on the failure distribution of InGaAs-based MOS stacks;Microelectronics Reliability;2016-01

5. Resilience of ultra-thin oxynitride films to percolative wear-out and reliability implications for high-κ stacks at low voltage stress;Journal of Applied Physics;2013-09-07

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