On the Impact of Time-Zero Variability, Variable NBTI, and Stochastic TDDB on SRAM Cells-Reference-Cited by-同舟云学术

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On the Impact of Time-Zero Variability, Variable NBTI, and Stochastic TDDB on SRAM Cells

Published:2016-07 Issue:7 Volume:63 Page:2764-2770
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Mishra Subrat^ORCID,Mahapatra Souvik

Funder

IIT Bombay

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/7494744/07467448.pdf?arnumber=7467448

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology?;Advanced Materials;2022-04-10

2. Design and Simulation for NBTI Aware Logic Gates;Wireless Personal Communications;2021-04-30

3. Method and software platform for electronic COTS parts reliability estimation in space applications;Proceedings of the Institution of Mechanical Engineers, Part O: Journal of Risk and Reliability;2021-03-23

4. SRAM Stability Analysis and Performance–Reliability Tradeoff for Different Cache Configurations;IEEE Transactions on Very Large Scale Integration (VLSI) Systems;2020-03

5. Analyzing the Impact of NBTI and Process Variability on Dynamic SRAM Metrics Under Temperature Variations;Lecture Notes in Electrical Engineering;2020

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