Thermal analysis of ultra-thin body device scaling [SOI and FinFet devices]-Reference-Cited by-同舟云学术

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Thermal analysis of ultra-thin body device scaling [SOI and FinFet devices]

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Container-title:IEEE International Electron Devices Meeting 2003
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Author:

Pop E.,Dutton R.,Goodson K.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/8960/28396/01269420.pdf?arnumber=1269420

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3. Investigation of ambient temperature and thermal contact resistance induced self-heating effects in nanosheet FET;Semiconductor Science and Technology;2022-04-12

4. HotGauge: A Methodology for Characterizing Advanced Hotspots in Modern and Next Generation Processors;2021 IEEE International Symposium on Workload Characterization (IISWC);2021-11

5. Modeling of nonlinear thermal resistance in FinFETs;Japanese Journal of Applied Physics;2016-03-14

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