Improved current performance of CMOSFETs with nitrogen incorporated HfO/sub 2/-Al/sub 2/O/sub 3/ laminate gate dielectric-Reference-Cited by-同舟云学术

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Improved current performance of CMOSFETs with nitrogen incorporated HfO/sub 2/-Al/sub 2/O/sub 3/ laminate gate dielectric

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Container-title:Digest. International Electron Devices Meeting,
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Author:

Hyung-Seok Jung ,Yun-Seok Kim ,Jong Pyo Kim ,Jung Hyoung Lee ,Jong-Ho Lee ,Nae-In Lee ,Ho-Kyu Kang ,Kwang-Pyuk Suh ,Hyuk Ju Ryu ,Chang-Bong Oh ,Young-Wug Kim ,Kyung-Hwan Cho ,Hion-Suck Baik ,Young Su Chung ,Hyo Sik Chang ,Dae Won Moon

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/8330/25999/01175971.pdf?arnumber=1175971

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. White X-Ray Radiation Effects in MOS Capacitors With Atomic Layer Deposited HfO₂/Al₂O₃ and Al₂O₃/HfO₂/Al₂O₃ Gate Dielectric Stacks for High Total Doses;IEEE Transactions on Device and Materials Reliability;2023-03

2. Memristive device with highly continuous conduction modulation and its underlying physical mechanism for electronic synapse application;Science China Materials;2020-07-31

3. Nitrogen Engineering in the Ultrathin SiO2 Interface Layer of High- ${k}$ CMOS Devices: A First-Principles Investigation of Fluorine, Oxygen, and Boron Defect Migration;IEEE Transactions on Electron Devices;2017-12

4. Review and Perspective of Hf-based High-kGate Dielectrics on Silicon;Critical Reviews in Solid State and Materials Sciences;2012-07

5. (Invited) Dielectric Properties and Flat-Band Voltages of Doped- HfO2 Thin Films;ECS Transactions;2010-04-16

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