The impact of la-doping on the reliability of low Vth high-k/metal gate nMOSFETs under various gate stress conditions-Reference-Cited by-同舟云学术

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The impact of la-doping on the reliability of low Vth high-k/metal gate nMOSFETs under various gate stress conditions

Published:2008-12 Issue: Volume: Page:
ISSN:
Container-title:2008 IEEE International Electron Devices Meeting
language:
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Author:

Kang C. Y.,Young C. D.,Huang J.,Kirsch P.,Heh D.,Sivasubramani P.,Park H. K.,Bersuker G.,Lee B. H.,Choi H.S.,Lee K.T.,Jeong Y-H.,Lichtenwalner J.,Kingon A. I.,Tseng H-H,Jammy R.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4786613/4796592/04796628.pdf?arnumber=4796628

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