Improved Degradation and Recovery Characteristics of SiGe p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors under Negative-Bias Temperature Stress
-
Published:2013-04-01
Issue:4S
Volume:52
Page:04CC21
-
ISSN:0021-4922
-
Container-title:Japanese Journal of Applied Physics
-
language:
-
Short-container-title:Jpn. J. Appl. Phys.
Author:
Choi Do-Young,Sohn Chang-Woo,Sagong Hyun Chul,Jung Eui-Young,Kang Chang Yong,Lee Jeong-Soo,Jeong Yoon-Ha
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering