Author:
Pramanik S.,Bandyopadhyay S.,Cahay M.
Cited by
3 articles.
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1. Design of Spin-FET Electrical Model for Basic Gates;2024 IEEE 4th International Conference on VLSI Systems, Architecture, Technology and Applications (VLSI SATA);2024-05-17
2. Spin Field-Effect Transistor: For Steep Switching Behavior;Springer Tracts in Electrical and Electronics Engineering;2024
3. Modelling for triple gate spin‐FET and design of triple gate spin‐FET‐based binary adder;IET Circuits, Devices & Systems;2020-03-20