An Analytical Model for Hot Carrier Induced Long-Term Degradation in Power Amplifiers-Reference-Cited by-同舟云学术

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An Analytical Model for Hot Carrier Induced Long-Term Degradation in Power Amplifiers

Published:2020-10 Issue:10 Volume:39 Page:2000-2005
ISSN:0278-0070
Container-title:IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
language:
Short-container-title:IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst.

Author:

Eslahi Hossein^ORCID,Albahrani Sayed Ali,Mahajan Dhawal^ORCID,Khandelwal Sourabh^ORCID

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Software

Link

http://xplorestaging.ieee.org/ielx7/43/9204502/08894547.pdf?arnumber=8894547

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization and Modeling of Hot Carrier Degradation Under Dynamic Operation Voltage;IEEE Transactions on Device and Materials Reliability;2024-03

2. A 1.8-V GPIO With Design-Technology-Reliability Co-Optimization in Sub-3-nm GAA-NS Technology;IEEE Journal of Solid-State Circuits;2024

3. High-Precision Fitting of Simulation Parameters for Circuit Aging Effect;Electronics;2023-05-08

4. A high-efficiency aging test with new data processing method for semiconductor device;Microelectronics Reliability;2023-04

5. Development and Challenges of Reliability Modeling From Transistors to Circuits;IEEE Journal of the Electron Devices Society;2023

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