3D Die-to-wafer Cu/Sn Microconnects Formed Simultaneously with an Adhesive Dielectric Bond Using Thermal Compression Bonding-Reference-Cited by-同舟云学术

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3D Die-to-wafer Cu/Sn Microconnects Formed Simultaneously with an Adhesive Dielectric Bond Using Thermal Compression Bonding

Published:2008-06 Issue: Volume: Page:
ISSN:
Container-title:2008 International Interconnect Technology Conference
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Author:

Pozder Scott,Jain Ankur,Chatterjee Ritwik,Huang Zhihong,Jones Robert E.,Acosta Eddie,Marlin Bill,Hillmann Gerhard,Sobczak Martin,Kreindl Gerald,Kanagavel Senthil,Kostner Hannes,Pargfrieder Stefan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4540055/4546905/04546921.pdf?arnumber=4546921

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Quartz resonator assembling with TSV interposer using polymer sealing or metal bonding;Nanoscale Research Letters;2014-10-01

2. Experimental investigation of electromigration failure in Cu–Sn–Cu micropads in 3D integrated circuits;Microelectronic Engineering;2014-06

3. Handling of Thin Dies with Emphasis on Chip-to-Wafer Bonding;Ultra-thin Chip Technology and Applications;2010-11-12

4. Electrical modeling and characterization of through-silicon vias (TSVs) for 3-D integrated circuits;Microelectronics Journal;2010-01

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