Density scaling beyond the FinFET: Architecture considerations for gate-all-around CMOS-Reference-Cited by-同舟云学术

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Density scaling beyond the FinFET: Architecture considerations for gate-all-around CMOS

Published:2016-06 Issue: Volume: Page:
ISSN:
Container-title:2016 74th Annual Device Research Conference (DRC)
language:
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Author:

Guillorn Michael A.,Loubet Nicolas J.,Yeung Chun-Wing,Chao Robin,Muthinti Raja,Demarest James,Robison Robert,Miao Xin,Zhang Jingyun,Hook Terry,Oldiges Phil,Yamashita Tenko

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7541905/7548277/07548399.pdf?arnumber=7548399

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Elimination of the Impact of Trap Charges through Heterodielectric BOX in Nanoribbon FET;Nanoelectronic Devices and Applications;2024-06-26

2. Study on trap sensitivity for single material gate and double material gate nano-ribbon FETs;Physica Scripta;2024-06-20

3. Investigation on electrical parameters between single and double material gate nanoribbon FETs including trap distributions;Materials Science and Engineering: B;2024-05

4. Reliability study of nano ribbon FET with temperature variation including interface trap charges;Materials Science and Engineering: B;2023-12

5. Performance analysis of parallel array of nanowires and a nanosheet in SG, DG and GAA FETs;Solid-State Electronics;2019-12

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