A High-reliability Half-Bridge GaN FET Gate Driver with Advanced Floating Bias Control Techniques-Reference-Cited by-同舟云学术

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A High-reliability Half-Bridge GaN FET Gate Driver with Advanced Floating Bias Control Techniques

Published:2019-05 Issue: Volume: Page:
ISSN:
Container-title:2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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Author:

Ming Xin,Zhang Xuan,Zhang Zhi-Wen,Hu Li,Qin Yao,Feng Xu-Dong,Zhou Qi,Wang Zhuo,Zhang Bo

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8746072/8757559/08757625.pdf?arnumber=8757625

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Online Condition Monitoring for GaN Power Devices With Integrated Dynamic On-Resistance Full Profile Scan and Offset Calibration;IEEE Transactions on Power Electronics;2024-05

2. A 50-V 50-MHz High-Noise-Immunity Capacitive-Coupled Level Shifter With Digital Noise Blanker for GaN Drivers;IEEE Transactions on Circuits and Systems I: Regular Papers;2023-05

3. Design of a 5MHz 4A Half Bridge Gate Driver in 180nm BCD Process for GaN HEMT;2022 7th International Conference on Integrated Circuits and Microsystems (ICICM);2022-10-28

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