Online Condition Monitoring for GaN Power Devices With Integrated Dynamic On-Resistance Full Profile Scan and Offset Calibration-Reference-Cited by-同舟云学术

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Online Condition Monitoring for GaN Power Devices With Integrated Dynamic On-Resistance Full Profile Scan and Offset Calibration

Published:2024-05 Issue:5 Volume:39 Page:6215-6224
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

Yan Dong¹^ORCID,Ma D. Brian¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, The University of Texas at Dallas, Richardson, TX, USA

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/63/10478433/10387747.pdf?arnumber=10387747

Reference25 articles.

1. An industry-based survey of reliability in power electronic converters

2. Reliability of Power Electronic Systems: An Industry Perspective

3. Incorporating Power Electronic Converters Reliability Into Modern Power System Reliability Analysis

4. Remaining Useful Life Prediction of MOSFETs via the Takagi–Sugeno Framework

5. Performance Degradation of GaN HEMTs Under Accelerated Power Cycling Tests

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Chip-Level Condition Monitoring on Wide Bandgap Power Devices: Challenges & Opportunities;2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA);2024-04-22

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