High-speed, high-reliability GaN power device with integrated gate driver-Reference-Cited by-同舟云学术

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High-speed, high-reliability GaN power device with integrated gate driver

Published:2018-05 Issue: Volume: Page:
ISSN:
Container-title:2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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Author:

Tang Gaofei,Kwan M.-H.,Zhang Zhaofu,He Jiabei,Lei Jiacheng,Su R.-Y.,Yao F.-W.,Lin Y.-M.,Yu J.-L.,Yang Thomas,Chern Chan-Hong,Tsai Tom,Tuan H. C.,Kalnitsky Alexander,Chen Kevin J.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8387225/8393579/08393606.pdf?arnumber=8393606

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