Investigation on total-ionizing-dose radiation response for high voltage ultra-thin layer SOI LDMOS-Reference-Cited by-同舟云学术

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Investigation on total-ionizing-dose radiation response for high voltage ultra-thin layer SOI LDMOS

Published:2018-05 Issue: Volume: Page:
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Container-title:2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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Author:

Zhou Xin,Zhang Lingfang,Qiao Ming,Yuan Zhangyi'an,Luo Ping,Shu Lei,Li Zhaoji,Zhang Bo

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8387225/8393579/08393603.pdf?arnumber=8393603

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Novel SGT MOSFET Based on Radiation-Hardening Technology and Its Total-Ionizing-Dose Radiation Effects;IEEE Electron Device Letters;2024-07

2. High Performance Split-Gate-Trench MOS Based on Radiation-Hardening Technology and Its Total-Ionizing-Dose Radiation Effects;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02

3. Analysis of TID Effects on the Threshold Voltage and Breakdown Voltage of 100-V Split-Gate Trench VDMOS;IEEE Transactions on Electron Devices;2024-06

4. Study on the Space Radiation Environment and Effects for Transfer Orbit;Journal of Aerospace Science and Technology;2024

5. TID Effect of MOSFETs in SOI BCD Process and Its Hardening Technique;IEEE Transactions on Nuclear Science;2023-08

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