70 mΩ/600 V normally-off GaN transistors on SiC and Si substrates-Reference-Cited by-同舟云学术

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70 mΩ/600 V normally-off GaN transistors on SiC and Si substrates

Published:2015-05 Issue: Volume: Page:
ISSN:
Container-title:2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD)
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Author:

Hilt Oliver,Zhytnytska Rimma,Bocker Jan,Bahat-Treidel Eldad,Brunner Frank,Knauer Arne,Dieckerhoff Sibylle,Wurfl Joachim

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7118854/7123286/07123433.pdf?arnumber=7123433

Cited by 26 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Physical design guidelines to minimize area-specific ON-resistance for rated ON-current and breakdown voltage of GaN power HEMTs;Semiconductor Science and Technology;2023-02-16

2. Investigation of the Progressive Gate Breakdown Behaviors in p-GaN Gate HEMTs;IEEE Transactions on Electron Devices;2023-01

3. GaN-Based Multichip Half-Bridge Power Module Integrated on High-Voltage AlN Ceramic Substrate;IEEE Transactions on Power Electronics;2022-10

4. Strain Release in GaN Epitaxy on 4° Off‐Axis 4H‐SiC;Advanced Materials;2022-05-04

5. Charge Control in Schottky-Type p-GaN Gate HEMTs With Partially and Fully Depleted p-GaN Conditions;IEEE Transactions on Electron Devices;2022-05

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