Charge Control in Schottky-Type p-GaN Gate HEMTs With Partially and Fully Depleted p-GaN Conditions-Reference-Cited by-同舟云学术

Charge Control in Schottky-Type p-GaN Gate HEMTs With Partially and Fully Depleted p-GaN Conditions

Published:2022-05 Issue:5 Volume:69 Page:2262-2269
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Wu Qianshu¹^ORCID,Chen Jia¹^ORCID,He Liang²^ORCID,Zhang Jinwei¹,Qiu Qiuling¹,Feng Chenliang¹,Li Liuan¹^ORCID,Que Taotao¹,Liu Zhenxing¹,Wu Zhisheng¹,He Zhiyuan³^ORCID,Liu Yang¹

Affiliation:

1. State Key Laboratory of Optoelectronics Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, China

2. Electronics Research Institute of the Ministry of Industry and Information Technology, Guangzhou, China

3. Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, Electronics Research Institute of the Ministry of Industry and Information Technology, Guangzhou, China

Funder

Science and Technology Plan of Guangdong Province

Special Project for Research and Development in Key areas of Guangdong Province

National Key Research and Development Program

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9761777/09672316.pdf?arnumber=9672316

Reference26 articles.

1. Impact of Gate Metal on the Performance of p-GaN/AlGaN/GaN High Electron Mobility Transistors

2. Control of Threshold Voltage of Enhancement-Mode AlxGa1-xN/GaN Junction Heterostructure Field-Effect Transistors Using p-GaN Gate Contact

3. On the physical operation and optimization of the p-GaN gate in normally-off GaN HEMT devices

4. Effect of doping in p-GaN gate on DC performances of AlGaN/GaN normally-off scaled HFETs

5. Analysis of the Gate Capacitance–Voltage Characteristics in p-GaN/AlGaN/GaN Heterostructures

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1. Effect of hydrogen poisoning on p-gate AlGaN/GaN HEMTs;Journal of Physics D: Applied Physics;2024-07-17

2. Physics-Based Models of 2DEG Density and Gate Capacitance for p-GaN/AlGaN/GaN Heterostructure;IEEE Transactions on Electron Devices;2024-07

3. A Comprehensive Model for Gate Current in E-Mode p-GaN HEMTs;IEEE Transactions on Electron Devices;2024-03

4. Gate Characteristics of Enhancement-Mode Fully Depleted p-GaN Gate HEMT;IEEE Electron Device Letters;2023-12

5. Physics-based Analytical Modeling of p-GaN/AlGaN/GaN HEMTs;2022 IEEE 19th India Council International Conference (INDICON);2022-11-24