Optimizing the trade-off between the RDS(on) of power MOSFETs and linear mode perfomance by local modification of MOSFET gain-Reference-Cited by-同舟云学术

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Optimizing the trade-off between the RDS(on) of power MOSFETs and linear mode perfomance by local modification of MOSFET gain

Published:2016-06 Issue: Volume: Page:
ISSN:
Container-title:2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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Author:

Chang Mo-Huai,Rutter Phil

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7509008/7520753/07520857.pdf?arnumber=7520857

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Above 48% Improvement of Wide SOA Enhancement Technology and Mechanism for 30-V SGT MOSFET on Application of Hot-Swap;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02

2. Ruggedness of Silicon Power MOSFETs—Part I: Cell Structure Design Related Failure: A Review;IEEE Transactions on Electron Devices;2024-06

3. A Split-Gate Power MOSFET Obtaining Ultra-Wide SOA Based on Time-Shared and Partitioned Conduction Gate Control;IEEE Journal of Emerging and Selected Topics in Power Electronics;2024-04

4. Inverted SOA and Transient Non-Linearity of LDMOS Devices With RESURF-Implant;2022 IEEE International Conference on Emerging Electronics (ICEE);2022-12-11

5. MOS Transistors and Field Controlled Wide Bandgap Devices;Semiconductor Power Devices;2018

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