1. Agarwal, A., Ryu, S.H.: Status of SiC power devices and manufacturing issues. In: CS MANTECH Conference, pp. 215–218. Vancouver, Canada, 24–27 Apr 2006
2. Beier-Möbius, M., Lutz, J.: Breakdown of gate oxide of 1.2 kV SiC-MOSFETs under high temperature and high gate voltage. In: Proceedings of the PCIM Europe, Nuremberg (2016)
3. Beier-Möbius, M., Lutz, J.: Breakdown of gate oxide of SiC-MOSFETs and Si-IGBTs under high temperature and high gate voltage. In: Proceedings of the PCIM Europe, Nuremberg (2017)
4. Belverde, G., Magrì, A., Melito, M., Musumeci, S., Pagano, R., Raciti, A.: Efficiency improvement of synchronous buck converters by integration of Schottky diodes in low-voltage MOSFETs. In: Proceedings of the IEEE ISIE, pp. 429–434 (2005)
5. Calafut, D., Trench power MOSFET lowside switch with optimized integrated Schottky diode. In: Proceedings of the International Symposium on Power Semiconductor Devices & ICs, pp. 397–400 (2004)