Trench power MOSFET lowside switch with optimized integrated Schottky diode
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5 articles.
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1. A 600V split-gate VDMOS with integrated trench MOS barrier Schottky;International Journal of Electronics;2021-01-04
2. MOS Transistors and Field Controlled Wide Bandgap Devices;Semiconductor Power Devices;2018
3. Integral Diode;Advanced Power MOSFET Concepts;2010
4. MOS Transistors;Semiconductor Power Devices;2010
5. System-in-Packages with Low Power Loss for Future Voltage Regulators;IEEJ Transactions on Electronics, Information and Systems;2010