Improved Short-Circuit Protection Method for SiC MOSFET Split-Output Power Module Achieving Ultra-Low Fault Dissipated Energy
Author:
Affiliation:
1. College of Electrical Engineering, Zhejiang University, Hangzhou, China
Funder
National Natural Science Foundation of China
National Key Research and Development Program of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/63/10368210/10339901.pdf?arnumber=10339901
Reference22 articles.
1. Analysis of Switching Loss Reduction of SiC MOSFET in Presence of Antiparallel SiC Schottky Diode
2. SiC MOSFET-based power modules utilizing split output topology for superior dynamic behavior,2013
3. Vincotech power modules featuring a split output,2012
4. Stray Inductance Reduction of Commutation Loop in the P-cell and N-cell-Based IGBT Phase Leg Module
5. SiC MOSFETs based split output half bridge inverter: Current commutation mechanism and efficiency analysis
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