Si wafer technology for power devices: A review and future directions
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/8387225/8393579/08393591.pdf?arnumber=8393591
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Evaluation of thermally activated defects behaviors in nitrogen-doped Czochralski silicon single crystals using deep level transient spectroscopy;Japanese Journal of Applied Physics;2023-07-01
2. Nitrogen-Doped Czochralski Silicon Wafers as Materials for Conventional and Scaled Insulated Gate Bipolar Transistors;IEEE Transactions on Semiconductor Manufacturing;2022-11
3. Oxygen concentration dependence of as-grown defect formation in nitrogen-doped Czochralski silicon single crystals;Journal of Crystal Growth;2021-09
4. Effect of Surface Oxygen Concentration on Wafer Strength in Floating Zone Si Wafers;ECS Journal of Solid State Science and Technology;2020-10-07
5. Oxygen Precipitation Properties of Nitrogen‐Doped Czochralski Silicon Single Crystals with Low Oxygen Concentration;physica status solidi (a);2019-07-19
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