IGBT with superior long-term switching behavior by asymmetric trench oxide-Reference-Cited by-同舟云学术

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IGBT with superior long-term switching behavior by asymmetric trench oxide

Published:2018-05 Issue: Volume: Page:
ISSN:
Container-title:2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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Author:

Sandow C.,Brandt P.,Felsl H.-P.,Niedernostheide F.-J.,Pfirsch F.,Schulze H.-J.,Stegner A.,Umbach F.,Santos F.,Wagner W.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8387225/8393579/08393593.pdf?arnumber=8393593

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Novel Trench IGBT With N-P-N Polysilicon Gate Structure for Low EMI Noise and High Robustness;IEEE Transactions on Electron Devices;2024-04

2. Carrier Stored Trench-Gate Bipolar Transistor With Stepped Split Trench-Gate Structure;IEEE Transactions on Electron Devices;2022-10

3. Long-term electrical stability of next generation LV Trench IGBT at Hitachi ABB Power Grids;Microelectronics Reliability;2021-11

4. Scalable Multitasking Dynamic Pulse Based Reliability Stress Test for High Voltage Discrete Semiconductors;2021 23rd European Conference on Power Electronics and Applications (EPE'21 ECCE Europe);2021-09-06

5. Configurable gate driver for a stress test bench of newly developed discrete silicon power devices;Microelectronics Reliability;2021-09

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