Long-term electrical stability of next generation LV Trench IGBT at Hitachi ABB Power Grids-Reference-Cited by-同舟云学术

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Long-term electrical stability of next generation LV Trench IGBT at Hitachi ABB Power Grids

Published:2021-11 Issue: Volume:126 Page:114300
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Schneider Nick,Buitrago Elizabeth,Vitale Wolfgang,De-Michielis Luca

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. Long Term Stability and Drift Phenomena of Different Trench IGBT Structures Under Repetitive Switching Tests;Laska,2007

2. IGBT With Superior Long-term Switching Behavior by Asymmetric Trench Oxide;Sandow,2018

3. Extraction of dynamic avalanche during IGBT turn off;Geissmann;Microelectron. Reliab.,2017

4. Rugged LV Trench IGBT With Extreme Stability in Continuous SOA Operation: Next Gen LV Technology at Hitachi ABB Power Grids;Buitrago,2021

5. “Power Semiconductors”, S. Linder EPFL Press.

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Experimental Demonstration of Point-Injection Trench IGBT Concept;2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2023-05-28

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