Paralleling GaN E-HEMTs in 10kW–100kW systems
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Publisher
IEEE
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http://xplorestaging.ieee.org/ielx7/7922447/7930596/07931131.pdf?arnumber=7931131
Cited by 39 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Mechanism Analysis and Oscillation Suppression of the False Triggering Oscillation for Parallel-Connected GaN Devices;IEEE Transactions on Power Electronics;2024-11
2. Hybrid Double-Side Cooled Package for Multichip GaN Power Module With Optimal Current Sharing at High Switching Speed;IEEE Journal of Emerging and Selected Topics in Power Electronics;2024-08
3. Impact of Circuit Mismatches and Parasitic Parameters on Paralleling 650-V E-Mode GaN HEMTs;2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia);2024-05-17
4. The First Investigation of Switching Lifetime on Parallel-Connected GaN Power Devices;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14
5. Power Layout Design of a GaN HEMTs-Based High-Power High-Efficiency Three-Level ANPC Inverter for 800 V DC Bus System;IEEE Journal of Emerging and Selected Topics in Industrial Electronics;2024-04
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