The First Investigation of Switching Lifetime on Parallel-Connected GaN Power Devices-Reference-Cited by-同舟云学术

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The First Investigation of Switching Lifetime on Parallel-Connected GaN Power Devices

Published:2024-04-14 Issue: Volume: Page:2C.2-1-2C.2-6
ISSN:
Container-title:2024 IEEE International Reliability Physics Symposium (IRPS)
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Author:

Huang Yifei¹,Jiang Qimeng¹,Huang Sen¹,Dai Xinyue¹,Wang Xinhua¹,Liu Xinyu¹

Affiliation:

1. Institute of Microelectronics, Chinese Academy of Sciences,Beijing,China,100029

Funder

National Key Research and Development Program of China

Youth Innovation Promotion Association of Chinese Academy Sciences (CAS)

National Natural Science Foundation of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10529283/10529298/10529463.pdf?arnumber=10529463

Reference18 articles.

1. Paralleling GaN E-HEMTs in 10kW–100kW systems

2. Paralleling of Four 650V/60A GaN HEMTs for High Power Traction Drive Applications

3. GaN-on-Si Power Technology: Devices and Applications

4. AlGaN/GaN HEMTs-an overview of device operation and applications

5. Design consideration of gate driver circuits and PCB parasitic parameters of paralleled E-mode GaN HEMTs in zero-voltage-switching applications

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