Mechanism Analysis and Oscillation Suppression of the False Triggering Oscillation for Parallel-Connected GaN Devices
Author:
Affiliation:
1. School of Integrated Circuit Science and Engineering, School of Electrical Engineering, Southwest Jiaotong University, Chengdu, China
2. School of Electrical Engineering, Southwest Jiaotong University, Chengdu, China
Funder
National Natural Science Foundation of China
Sichuan Science and Technology Program
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx8/63/10679334/10621653.pdf?arnumber=10621653
Reference37 articles.
1. Current Sharing Analysis of Paralleled GaN HEMT Via Feedback Theory
2. Analyses of the unbalanced paralleled GaN HEMT transistors;Sang
3. Paralleling 650 V/ 60 A GaN HEMTs for high power high efficiency applications
4. Paralleling of Four 650V/60A GaN HEMTs for High Power Traction Drive Applications
5. Paralleling GaN E-HEMTs in 10kW–100kW systems
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