Author:
Xinhua Wang ,Sen Huang ,Yingkui Zheng ,Ke Wei ,Xiaojuan Chen ,Haoxiang Zhang ,Xinyu Liu
Funder
Knowledge Innovation Program of Chinese Academy of Sciences
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Cited by
50 articles.
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1. A L-Band 1003-W AlGaN/GaN HEMT Power Amplifier for Operation at 100V Bias;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27
2. DC and RF Performance Analysis of Extended Field Plated AlGaN/GaN/ β-Ga2O3 HEMT;Transactions on Electrical and Electronic Materials;2023-08-01
3. The Study of the Material Principle and Physical Characteristic Analysis of eGaN FETs;Journal of Physics: Conference Series;2023-07-01
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5. Design of AlGaN/GaN HEMT Device with InGaN Back Barrier for RF Applications;2023 International Conference on Communication, Circuits, and Systems (IC3S);2023-05-26