A L-Band 1003-W AlGaN/GaN HEMT Power Amplifier for Operation at 100V Bias
Author:
Affiliation:
1. Institute of Microelectronics, Peking University,Beijing,China,100871
2. The 13th research Institute, CETC,Shijiazhuang,China,050051
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10399638/10399484/10399731.pdf?arnumber=10399731
Reference14 articles.
1. Substrate Effects on the Electrical Properties in GaN-Based High Electron Mobility Transistors
2. Effects of Al Composition and High-Temperature Atomic Layer-Deposited Al2O3 Layer on the Leakage Current Characteristics of AlGaN/GaN Schottky Barrier Diodes
3. Effect of GaN Channel Layer Thickness on DC and RF Performance of GaN HEMTs With Composite AlGaN/GaN Buffer
4. High-performance low-leakage enhancement-mode high-K dielectric GaN MOSHEMTs for energy-efficient, compact voltage regulators and RF power amplifiers for low-power mobile SoCs
5. GaN HEMTs for 5G Base Station Applications
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