Spatial Modulation of Vibrational and Luminescence Properties of Monolayer MoS₂ Using a GaAs Nanowire Array-Reference-Cited by-同舟云学术

Spatial Modulation of Vibrational and Luminescence Properties of Monolayer MoS₂ Using a GaAs Nanowire Array

Published:2022-08 Issue:4 Volume:58 Page:1-8
ISSN:0018-9197
Container-title:IEEE Journal of Quantum Electronics
language:
Short-container-title:IEEE J. Quantum Electron.

Author:

Balgarkashi Akshay¹^ORCID,Piazza Valerio¹^ORCID,Jasinski Jakub²,Frisenda Riccardo³,Surrente Alessandro²^ORCID,Baranowski Michal²^ORCID,Dimitrievska Mirjana¹,Dede Didem¹,Kim Wonjong⁴,Guniat Lucas¹,Leran Jean-Baptiste¹,Castellanos-Gomez Andres³,Plochocka Paulina²^ORCID,Fontcuberta i Morral Anna¹^ORCID

Affiliation:

1. Laboratory of Semiconductor Materials, Institute of Materials, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland

2. Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wrocław, Poland

3. Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), Madrid, Spain

4. Laboratory of Semiconductor Materials, Institute of Materials, EPFL, Lausanne, Switzerland

Funder

Swiss National Science Foundation

European Union’s Horizon 2020 Research and Innovation Program under the Marie Skłodowska-Curie

Project LIMQUET

European Research Council (ERC) under the European Union’s Horizon 2020 Research and Innovation Program

ERC-StG 2017 Project 2D-TOPSENSE

National Science Centre Poland within the SONATA BIS Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics

Link

http://xplorestaging.ieee.org/ielx7/3/9843922/09757207.pdf?arnumber=9757207

Reference49 articles.

1. Coulomb engineering of the bandgap and excitons in two-dimensional materials

2. Dielectric Screening of Excitons and Trions in Single-Layer MoS2

3. Phonons in single-layer and few-layer MoS2and WS2

4. Symmetry-dependent phonon renormalization in monolayer MoS2transistor

5. Band Gap Engineering with Ultralarge Biaxial Strains in Suspended Monolayer MoS2

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1. Electronic properties of MoSe₂ nanowrinkles;Nanoscale;2024

2. Mixed-dimensional heterostructures for quantum photonic science and technology;MRS Bulletin;2023-08-15

3. Built-in tensile strain dependence on the lateral size of monolayer MoS₂ synthesized by liquid precursor chemical vapor deposition;Nanoscale;2023