Gate-First Integration of Tunable Work Function Metal Gates of Different Thicknesses Into High-$k$/Metal Gates CMOS FinFETs for Multi- $V_{\rm Th}$ Engineering-Reference-Cited by-同舟云学术

Gate-First Integration of Tunable Work Function Metal Gates of Different Thicknesses Into High-$k$/Metal Gates CMOS FinFETs for Multi- $V_{\rm Th}$ Engineering

Published:2010-03 Issue:3 Volume:57 Page:626-631
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Hussain Muhammad Mustafa,Smith Casey E.,Harris H. Rusty,Young Chadwin D.,Tseng Hsing-Huang,Jammy Rajarao

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/5419130/05404737.pdf?arnumber=5404737

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