Inhibition of Oxygen Scavenging by TiN at the TiN/SiO2 Interface by Atomic-Layer-Deposited Al2O3 Protective Interlayer
Author:
Affiliation:
1. Institute of Physics, St-Petersburg State University, Ulyanovskaya Str. 1, Peterhof, St. Petersburg 198504, Russia
2. Department of Physics, University of Leuven, Celestijnenlaan 200D, Leuven 3001, Belgium
Funder
Russian Science Foundation
Helmholtz Zentrum Berlin (HZB)
Publisher
American Chemical Society (ACS)
Subject
Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.9b05800
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5. Ragnarsson, L.A.; Dekkers, H.; Matagne, P.; Schram, T.; Conard, T.; Horiguchi, N.; Thean, A. V.Y. Zero-Thickness Multi Work Function Solutions for N7 Bulk FinFETs. In 2016 IEEE Symposium on VLSI Technology; IEEE, 2016, pp 1–2.
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