Electron Mobility and Short-Channel Device Characteristics of SOI FinFETs With Uniaxially Strained (110) Channels-Reference-Cited by-同舟云学术

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Electron Mobility and Short-Channel Device Characteristics of SOI FinFETs With Uniaxially Strained (110) Channels

Published:2009-08 Issue:8 Volume:56 Page:1651-1658
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Irisawa Toshifumi,Okano Kimitoshi,Horiuchi Takuya,Itokawa Hiroshi,Mizushima Ichiro,Usuda Koji,Tezuka Tsutomu,Sugiyama Naoharu,Takagi Shin-ichi

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/5170230/05165088.pdf?arnumber=5165088

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hole mobility enhancement observed in (110)-oriented strained Si;Japanese Journal of Applied Physics;2020-02-07

2. Impact of Mole Fractions due to Work Function Variability (WFV) of Metal Gate on Electrical Parameters in Strained SOI-FinFET;Silicon;2019-04-26

3. Device Modelling for Bendable Piezoelectric FET-Based Touch Sensing System;IEEE Transactions on Circuits and Systems I: Regular Papers;2016-12

4. Fin shape dependent variability for strained SOI FinFETs;Microelectronic Engineering;2016-08

5. Parasitic Gate Resistance Impact on Triple-Gate FinFET CMOS Inverter;IEEE Transactions on Electron Devices;2016-07

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