Fin shape dependent variability for strained SOI FinFETs

Author:

Dubey Shashank,Kondekar Pravin N.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference30 articles.

1. A 90-nm logic technology featuring strained-Silicon;Thompson;IEEE Trans. Electron Devices,2004

2. Strain engineering for CMOS devices;Ungersboeck,2006

3. Comparison of threshold-voltage shifts for uniaxial and biaxial tensile-stressed n-MOSFETs;Lim;IEEE Electron Device Lett.,2004

4. High performance extremely thin SOI (ETSOI) hybrid CMOS with Si channel NFET and strained SiGe channel PFET;Cheng,2012

5. Strained Silicon-Germanium-On-Insulator n-MOSFET with embedded Silicon source-and-drain stressors;Wang;IEEE Electron Device Lett.,2008

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