Improvement of Negative Bias Temperature Instability by Stress Proximity Technique-Reference-Cited by-同舟云学术

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Improvement of Negative Bias Temperature Instability by Stress Proximity Technique

Published:2010-01 Issue:1 Volume:57 Page:238-243
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Yang Jian Bo,Chen T. P.,Gong Ying,Tan Shyue Seng,Ng Chee Mang,Chan Lap

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/5357518/05353642.pdf?arnumber=5353642

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mitigation of Threshold Voltage Shift Due to Negative Bias Temperature Instability by Exploiting Solgel-Derived TiO2 Incorporation;National Academy Science Letters;2019-02-09

2. Unification of contemporary negative bias temperature instability models for p-MOSFET energy degradation;Renewable and Sustainable Energy Reviews;2013-10

3. Defect Loss: A New Concept for Reliability of MOSFETs;IEEE Electron Device Letters;2012-04

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