The <formula formulatype="inline"><tex Notation="TeX">$\hbox{1}/f$</tex></formula> Noise and Random Telegraph Noise Characteristics in Floating-Gate <emphasis emphasistype="smcaps">nand</emphasis> Flash Memories-Reference-Cited by-同舟云学术

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The $\hbox{1}/f$ Noise and Random Telegraph Noise Characteristics in Floating-Gate nand Flash Memories

Published:2009-08 Issue:8 Volume:56 Page:1624-1630
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Bae Sung-Ho,Lee Jeong-Hyun,Kwon Hyuck-In,Ahn Jung-Ryul,Om Jae-Chul,Park Chan Hyeong,Lee Jong-Ho

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/5170230/05159497.pdf?arnumber=5159497

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A denoising autoencoder based on U-Net and bidirectional long short-term memory for multi-level random telegraph signal analysis;Engineering Applications of Artificial Intelligence;2024-09

2. Random Telegraph Noise and Radiation Response of 80 nm Vertical Charge-Trapping NAND Flash Memory Devices With SiON Tunneling Oxide;IEEE Transactions on Nuclear Science;2024-08

3. Low-Frequency and Random Telegraph Noise in 14-nm Bulk Si Charge-Trap Transistors;IEEE Transactions on Electron Devices;2023-06

4. Synaptic 1/f noise injection for overfitting suppression in hardware neural networks;Neuromorphic Computing and Engineering;2022-08-05

5. Investigation of Low-Frequency Noise Characteristics of Ferroelectric Tunnel Junction: From Conduction Mechanism and Scaling Perspectives;IEEE Electron Device Letters;2022-06

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