Low-Frequency and Random Telegraph Noise in 14-nm Bulk Si Charge-Trap Transistors-Reference-Cited by-同舟云学术

Low-Frequency and Random Telegraph Noise in 14-nm Bulk Si Charge-Trap Transistors

Published:2023-06 Issue:6 Volume:70 Page:3215-3222
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Gorchichko Mariia¹^ORCID,Zhang En Xia²^ORCID,Reaz Mahmud¹^ORCID,Li Kan¹^ORCID,Wang Peng Fei¹^ORCID,Cao Jingchen¹^ORCID,Brewer Rachel M.¹^ORCID,Schrimpf Ronald D.²^ORCID,Reed Robert A.²^ORCID,Sierawski Brian D.²^ORCID,Alles Michael L.²,Cox Jonathan³,Moran Steven L.³^ORCID,Iyer Subramanian S.³^ORCID,Fleetwood Daniel M.²^ORCID

Affiliation:

1. Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN, USA

2. Department of Electrical and Computer Engineering, Vanderbilt University, Nashville, TN, USA

3. Electrical & Computer Engineering Department, University of California, Los Angeles, Los Angeles, CA, USA

Funder

Air Force Office of Sponsored Research

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10136238/10108908.pdf?arnumber=10108908

Reference63 articles.

1. 14-nm FinFET Technology for Analog and RF Applications

2. New approach for understanding “random device physics” from channel percolation perspectives: Statistical simulations, key factors and experimental results

3. Guidelines for a Reliable Analysis of Random Telegraph Noise in Electronic Devices

4. Complex Random Telegraph Noise (RTN): What Do We Understand?

5. Unsupervised Learning Using Charge-Trap Transistors

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Random Telegraph Noise and Radiation Response of 80 nm Vertical Charge-Trapping NAND Flash Memory Devices With SiON Tunneling Oxide;IEEE Transactions on Nuclear Science;2024-08

2. Evidence of Transport Degradation in 22 nm FD-SOI Charge Trapping Transistors for Neural Network Applications;Solid-State Electronics;2023-11