Investigation of Low-Frequency Noise Characteristics of Ferroelectric Tunnel Junction: From Conduction Mechanism and Scaling Perspectives-Reference-Cited by-同舟云学术

Investigation of Low-Frequency Noise Characteristics of Ferroelectric Tunnel Junction: From Conduction Mechanism and Scaling Perspectives

Published:2022-06 Issue:6 Volume:43 Page:958-961
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Shin Wonjun¹^ORCID,Bae Jong-Ho²^ORCID,Kwon Dongseok¹^ORCID,Koo Ryun-Han¹,Park Byung-Gook¹^ORCID,Kwon Daewoong³,Lee Jong-Ho¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, Seoul National University, Inter-University Semiconductor Research Center (ISRC), Seoul, South Korea

2. School of Electrical Engineering, Kookmin University, Seoul, South Korea

3. Department of Electrical Engineering, Inha University, Incheon, South Korea

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9780621/09760381.pdf?arnumber=9760381

Reference30 articles.

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3. Impact of RTN on Pattern Recognition Accuracy of RRAM-Based Synaptic Neural Network

4. Effects of High-Pressure Annealing on the Low-Frequency Noise Characteristics in Ferroelectric FET

5. Low‐Frequency Electronic Noise in Quasi‐2D van der Waals Antiferromagnetic Semiconductor FePS 3 —Signatures of Phase Transitions

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