A 28-90-GHz GaN Power Amplifier MMIC Using an Integrated fT-Doubler Topology
Author:
Affiliation:
1. now with Rohde & Schwarz GmbH & Co. KG,Munich,Germany
2. Fraunhofer Institute for Applied Solid State Physics IAF,Freiburg,Germany
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9574790/9574791/09574968.pdf?arnumber=9574968
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Broadband GaN-Based Power Amplifier MMIC for V-Band With Saturated Output Power Over 2 W;IEEE Microwave and Wireless Technology Letters;2024-05
2. Improving the RF Performance of InP DHBT Using fT-Doubler Technique;IEEE Microwave and Wireless Technology Letters;2023-12
3. A 2.5W/mm High-Power Density V-Band Power Amplifier Using 150 nm GaN Technology Beyond fT;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18
4. A Balanced Darlington Cell for a 3–230-GHz InP Distributed Amplifier;IEEE Transactions on Microwave Theory and Techniques;2023
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