A Bulk FinFET Unified-RAM (URAM) Cell for Multifunctioning NVM and Capacitorless 1T-DRAM-Reference-Cited by-同舟云学术

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A Bulk FinFET Unified-RAM (URAM) Cell for Multifunctioning NVM and Capacitorless 1T-DRAM

Published:2008-06 Issue:6 Volume:29 Page:632-634
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Han Jin-Woo,Ryu Seong-Wan,Kim Sungho,Kim Chung-Jin,Ahn Jae-Hyuk,Choi Sung-Jin,Kim Jin Soo,Kim Kwang Hee,Lee Gi Sung,Oh Jae Sub,Song Myeong Ho,Park Yun Chang,Kim Jeoung Woo,Choi Yang-Kyu

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/4526753/04526766.pdf?arnumber=4526766

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. One-Transistor Poly-Si Memory Devices With Near-Zero Subthreshold Swing and Extended Retention Time;IEEE Electron Device Letters;2024-06

2. A Novel 1T-DRAM Fabricated With 22 nm FD-SOI Technology;IEEE Electron Device Letters;2024-04

3. Design of a Capacitorless DRAM Based on a Polycrystalline-Silicon Dual-Gate MOSFET with a Fin-Shaped Structure;Nanomaterials;2022-10-09

4. Study on memory characteristics of fin-shaped feedback field effect transistor;Semiconductor Science and Technology;2022-04-21

5. Analysis of Single Event Effects in Capacitor-Less 1T-DRAM Based on an InGaAs Transistor;IEEE Transactions on Electron Devices;2021-04

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