One-Transistor Poly-Si Memory Devices With Near-Zero Subthreshold Swing and Extended Retention Time
Author:
Affiliation:
1. Department of Electronic Engineering, National Chin-Yi University of Technology, Taichung, Taiwan
Funder
National Science and Technology Council, Taiwan
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx7/55/10538033/10496672.pdf?arnumber=10496672
Reference10 articles.
1. A capacitor-less 1T-DRAM cell
2. New Generation of Z-RAM
3. A Bulk FinFET Unified-RAM (URAM) Cell for Multifunctioning NVM and Capacitorless 1T-DRAM
4. A Novel Capacitorless 1T DRAM Cell for Data Retention Time Improvement
5. Evolution of Unified-RAM: 1T-DRAM and BE-SONOS Built on a Highly Scaled Vertical Channel
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